LAUSR

Parasitic engineering for RRAM control.

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0 Published in 2018 at "Solid-state electronics"

DOI: 10.1016/j.sse.2018.10.006

Abstract: The inevitable current overshoot which follows forming in filamentary RRAM devices is often perceived as a source of variability that should be minimized. This sentiment has led to efforts to curtail the overshoot by decreasing… read more here.

Keywords: parasitic engineering; control; rram control; rram ... See more keywords