Unexpected partial dislocations within stacking faults in a cold deformed Mg−Bi alloy
Sign Up to like & getrecommendations! Published in 2020 at "Acta Materialia"
DOI: 10.1016/j.actamat.2020.02.010
Abstract: Abstract Stacking faults and the partial dislocations associated with them in a cold-rolled Mg–3wt%Bi alloy have been systematically characterized using transmission electron microscopy and high-angle annular dark-field scanning transmission electron microscopy. Intrinsic stacking faults I2… read more here.
Keywords: partial dislocations; microscopy; stacking faults; shockley partials ... See more keywords
Determination of partial dislocations of stacking fault in (111) single crystal diamond grown on (111) seed crystal by synchrotron X-ray topography
Sign Up to like & getrecommendations! Published in 2017 at "Journal of Crystal Growth"
DOI: 10.1016/j.jcrysgro.2016.11.094
Abstract: Abstract Stacking faults (SFs) in a (111) single crystal diamond grown on a (111) seed crystal were investigated by taking synchrotron X-ray topography images with various diffraction vector g conditions. We found that the SFs… read more here.
Keywords: topography; seed; partial dislocations; 111 single ... See more keywords
The heterogeneous nucleation of threading dislocations on partial dislocations in III-nitride epilayers
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DOI: 10.1038/s41598-020-74030-y
Abstract: III-nitride compound semiconductors are breakthrough materials regarding device applications. However, their heterostructures suffer from very high threading dislocation (TD) densities that impair several aspects of their performance. The physical mechanisms leading to TD nucleation in… read more here.
Keywords: iii nitride; nucleation threading; partial dislocations; nucleation ... See more keywords
Glide velocities of Si-core partial dislocations for double-Shockley stacking fault expansion in heavily nitrogen-doped SiC during high-temperature annealing
Sign Up to like & getrecommendations! Published in 2018 at "Journal of Applied Physics"
DOI: 10.1063/1.5031896
Abstract: We investigated the glide velocities of 30° Si-core partial dislocations for the expansion of double-Shockley stacking faults (DSFs) in heavily nitrogen-doped 4H-SiC crystals at high temperatures of approximately 1000 °C. The heavily doped epilayers grown by… read more here.
Keywords: core partial; velocities core; partial dislocations; expansion ... See more keywords