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Published in 2020 at "Semiconductor Science and Technology"
DOI: 10.1088/1361-6641/ab9eca
Abstract: In this paper, The Vertical Power MOSFET with Partial GaN/Si Heterojunction is proposed, and the Partial GaN/Si Heterojunction double-diffused MOSFET(Partial GaN/Si VDMOS)and U-shaped MOSFET(Partial GaN/Si UMOS)are simulated. Thanks to the breakdown point transfer technology(BPT), the…
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Keywords:
partial gan;
gan heterojunction;
breakdown point;
mosfet partial ... See more keywords