Fast-filling of 4H-SiC trenches at 10 μm/h by enhancing partial pressures of source species in chemical vapor deposition processes
Sign Up to like & getrecommendations! Published in 2020 at "Journal of Crystal Growth"
DOI: 10.1016/j.jcrysgro.2020.125809
Abstract: Abstract 4H-SiC trenches with depths of approximately 25 μm were filled under a special condition called the quasi-selective epitaxial growth mode that showed a refill-rate of 2.1 μm/h within 12 h, using a hot-wall chemical vapor deposition (CVD)… read more here.
Keywords: partial pressures; sic trenches; chemical vapor; source ... See more keywords
Control of Mg content and carrier concentration via post annealing under different Mg partial pressures for Sb-doped Mg2Si thermoelectric material
Sign Up to like & getrecommendations! Published in 2018 at "Journal of Solid State Chemistry"
DOI: 10.1016/j.jssc.2017.10.003
Abstract: Abstract An approach to control the Mg content in Sb-doped Mg2Si via post annealing under different Mg partial pressures is developed. Annealing under low and high Mg partial pressures (≤ 1 × 10–1 Pa and 1… read more here.
Keywords: partial pressures; doped mg2si; control content; carrier ... See more keywords