Fully tensile strained partial silicon-on-insulator n-type lateral-double-diffused metal-oxide-semiconductor field effect transistor using localized contact etching stop layers
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DOI: 10.1063/1.4983214
Abstract: The use of contact etching stop layer (CESL) stressors is a popular technique for introducing stress into a transistor channel. However, when tensile stress is applied to an n-type lateral double-diffused metal-oxide-semiconductor (LDMOS) by covering… read more here.
Keywords: silicon insulator; device; contact etching; partial silicon ... See more keywords