Passivation capping of InAs surface quantum dots by TMA/Al2O3: PL enhancement and blueshift suppression
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DOI: 10.1063/5.0140035
Abstract: Passivation capping that enhances the photoluminescence (PL) of molecular beam epitaxy (MBE)-grown InAs surface quantum dots (SQDs) is realized by ex situ low-temperature atomic layer deposition (ALD)-grown Al2O3. As the Al2O3 cap thickness increased from… read more here.
Keywords: passivation capping; microscopy; surface quantum; passivation ... See more keywords