Passivation and dissociation of P b-type defects at a-SiO2/Si interface
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DOI: 10.1088/1674-1056/ac0e20
Abstract: It is well known that in the process of thermal oxidation of silicon, there are P b-type defects at amorphous silicon dioxide/silicon (a-SiO2/Si) interface due to strain. These defects have a very important impact on… read more here.
Keywords: sio2 interface; type defects; passivation; passivation dissociation ... See more keywords