GaAs Semiconductor Passivated by (NH4)2Sx: Analysis of Different Passivation Methods Using Electrical Characteristics and XPS Measurements
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DOI: 10.1134/s106378262007009x
Abstract: Some of the III–V semiconductor used in various devices suffer from the surface high density of states limiting their application. This study compares and evaluates five different ammonium sulfide passivation methods on GaAs surface with… read more here.
Keywords: passivation methods; passivation; semiconductor; surface ... See more keywords