Novel Surface Passivation Scheme by Using p-Type AlTiO to Mitigate Dynamic ON Resistance Behavior in AlGaN/GaN HEMTs—Part II
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DOI: 10.1109/ted.2021.3064531
Abstract: The underlying mechanism responsible for the unique dynamic ON-resistance behavior is unified by demonstrating the presence of critical drain stress voltage, above which dynamic ON-resistance increases significantly, in different gate stacks. Metal–insulator–semiconductor (MIS)- and Schottky-gated… read more here.
Keywords: passivation; surface; surface passivation; passivation scheme ... See more keywords