Surface defects in 4H-SiC：properties, characterizations and passivation schemes
Sign Up to like & getrecommendations! Published in 2023 at "Semiconductor Science and Technology"
DOI: 10.1088/1361-6641/acd4df
Abstract: Silicon carbide (SiC) is a typical wide band-gap semiconductor material that exhibits excellent physical properties such as high electron saturated drift velocity, high breakdown field, etc. The SiC material contains many polytypes, among which 4H-SiC… read more here.
Keywords: carrier lifetime; surface defects; minority carrier; defects sic ... See more keywords
Long-Term Stability of Aluminum Oxide Based Surface Passivation Schemes Under Illumination at Elevated Temperatures
Sign Up to like & getrecommendations! Published in 2017 at "IEEE Journal of Photovoltaics"
DOI: 10.1109/jphotov.2017.2713411
Abstract: The stability of passivation layers under the conditions of field application of solar modules is a crucial parameter. We have performed an experiment to test the stability of aluminum oxide based passivation schemes under halogen… read more here.
Keywords: passivation; aluminum oxide; passivation schemes; stability ... See more keywords