A drain leakage phenomenon in poly silicon channel 3D NAND flash caused by conductive paths along grain boundaries
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DOI: 10.1016/j.mee.2018.02.009
Abstract: In this paper, a new drain leakage current phenomenon in the polycrystalline silicon channel three-dimensional (3D) NAND flash cell is discovered, which we have modeled as leakage paths along the grain boundaries. This drain leakage… read more here.
Keywords: phenomenon; drain leakage; leakage; paths along ... See more keywords