GaAs epilayers grown on patterned (001) silicon substrates via suspended Ge layers
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DOI: 10.1038/s41598-019-53949-x
Abstract: We demonstrate the growth of low density anti-phase boundaries, crack-free GaAs epilayers, by Molecular Beam Epitaxy on silicon (001) substrates. The method relies on the deposition of thick GaAs on a suspended Ge buffer realized… read more here.
Keywords: grown patterned; gaas epilayers; epilayers grown; 001 silicon ... See more keywords