Complete crack elimination in strained SiGe/Ge(111) heterostructures by pre-patterning of Si(111) substrates
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DOI: 10.35848/1882-0786/add83c
Abstract: We propose a novel method to completely eliminate cracks, which are unavoidably generated in strained SiGe(111) layers grown on Ge(111). We perform mesa-patterning of the Si(111) substrate first, and subsequently grow the strained SiGe/Ge(111) on… read more here.
Keywords: strained sige; patterning 111; crack elimination; sige 111 ... See more keywords