Numerical Investigation of High-Voltage Partial Buried P/N-Layer SOI LDMOS
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DOI: 10.1109/ted.2017.2724921
Abstract: High-voltage lateral double-diffused MOSFETs with partial buried P/N-type silicon layers (PBPL/PBNL) in silicon-on-insulator (SOI) technology are investigated numerically. In the lateral direction, the partial buried silicon layer (PBL) can introduce an additional electric field peak,… read more here.
Keywords: high voltage; partial buried; layer; pbpl pbnl ... See more keywords