Current transport and capacitance–voltage characteristics of an n-PbTe/p-GaP heterojunction prepared using the electron beam deposition technique
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DOI: 10.1016/j.jpcs.2017.12.029
Abstract: Abstract In this study, a crystalline n-PbTe/p-GaP heterojunction was fabricated using the electron beam deposition technique. The structural properties of the prepared heterojunction were examined by X-ray diffraction and scanning electron microscopy. The dark current–voltage… read more here.
Keywords: pbte gap; using electron; gap heterojunction; heterojunction ... See more keywords