Flexible, Temperature‐Stable, and Fatigue‐Endurable PbZr0.52Ti0.48O3 Ferroelectric Film for Nonvolatile Memory
Sign Up to like & getrecommendations! Published in 2019 at "Advanced Electronic Materials"
DOI: 10.1002/aelm.201900443
Abstract: Flexible memory devices represent an emerging technological goal for information storage and data processing in portable, wearable, and smart electronics that work in curved conditions. This work presents a direct and cost‐effective fabrication of a… read more here.
Keywords: pbzr0 52ti0; 52ti0 48o3; film; memory ... See more keywords
Enhanced dielectric and ferroelectric properties of PZT thin films derived by an ethylene glycol modified sol–gel method
Sign Up to like & getrecommendations! Published in 2017 at "Journal of Sol-Gel Science and Technology"
DOI: 10.1007/s10971-017-4311-5
Abstract: PbZr0.52Ti0.48O3 thin films on stainless steel substrates were fabricated by an ethylene glycol modified sol–gel method. Perovskite structure of PbZr0.52Ti0.48O3 thin films was examined by the X-ray diffraction analysis. With the increase of ethylene glycol,… read more here.
Keywords: 52ti0 48o3; thin films; 48o3 thin; glycol modified ... See more keywords
Nonmonotonic anomalous Hall effect and anisotropic magnetoresistance in SrRuO3/PbZr0.52Ti0.48O3 heterostructures
Sign Up to like & getrecommendations! Published in 2023 at "Chinese Physics B"
DOI: 10.1088/1674-1056/accd58
Abstract: We fabricated SrRuO3/PbZr0.52Ti0.48O3 heterostructures with an in-plane tensile-strained SrRuO3 layer and investigated the effect of an applied electric field on the anomalous Hall effect. The four-fold symmetry of anisotropic magnetoresistance and the nonmonotonic variation of… read more here.
Keywords: effect; hall effect; srruo3 pbzr0; anomalous hall ... See more keywords