Research on Losses of PCB Parasitic Capacitance for GaN-Based Full Bridge Converters
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DOI: 10.1109/tpel.2020.3024881
Abstract: The utilization of wide band-gap semiconductor devices provides the possibility of higher switching frequency and power density for power converters. However, the influence of parasitic parameters becomes more significant. It deteriorates the converter performance and… read more here.
Keywords: parasitic capacitance; loss; power; full bridge ... See more keywords