PdGe contact fabrication on Ga-doped Ge: Influence of implantation-mediated defects
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DOI: 10.1016/j.scriptamat.2018.02.037
Abstract: Abstract PdGe contact fabrication on Ge(001) wafers doped with Ga is investigated using conventional complementary metal-oxide-semiconductor processes. Despite a p-type doping level of ~1.4 × 10 20 cm −3 , the resistivity of the PdGe contact is… read more here.
Keywords: pdge contact; contact fabrication; fabrication doped; doped influence ... See more keywords