Few-layer PdSe2-based field-effect transistor for photodetector applications
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DOI: 10.1016/j.mssp.2020.105102
Abstract: Abstract We demonstrate a multilayer palladium diselenide (PdSe2) high-performance photodetector. The photodetector exhibits the photodetectivity of 0.15 × 1010 Jones under laser illumination (λ = 655 nm and power of 0.057 mWmm−2). The negative threshold voltage shift in transfer characteristics upon… read more here.
Keywords: based field; photodetector; pdse2 based; photodetector applications ... See more keywords