A transient ionizing radiation SPICE model for PDSOI MOSFET
Sign Up to like & getrecommendations! Published in 2020 at "Microwave and Optical Technology Letters"
DOI: 10.1002/mop.32317
Abstract: In this paper, a transient ionizing radiation SPICE model for PDSOI MOSFET is proposed for the simulation of the rail‐span collapse. It is based on the present understanding of transient ionizing radiation effects. The model… read more here.
Keywords: transient ionizing; pdsoi; radiation spice; ionizing radiation ... See more keywords
Single Event Upset Sensitivity of D-Flip Flop: Comparison of PDSOI With Bulk Si at 130 nm Technology Node
Sign Up to like & getrecommendations! Published in 2017 at "IEEE Transactions on Nuclear Science"
DOI: 10.1109/tns.2016.2636338
Abstract: Single-event upsets are studied in digital storage cells in 130nm CMOS bulk Si and PDSOI technologies. The sensitivity of SEU to different technologies and hardening approaches is explored by using heavy-ion radiation experiments. Error numbers… read more here.
Keywords: pdsoi; technology; single event; technology node ... See more keywords