Investigation of Negative Bias Temperature Instability Effect in Nano PDSOI PMOSFET
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DOI: 10.3390/mi13050808
Abstract: The Negative Bias Temperature Instability (NBTI) effect of partially depleted silicon-on-insulator (PDSOI) PMOSFET based on 130 nm is investigated. First, the effect of NBTI on the IV characteristics and parameter degradation of T-Gate PDSOI PMOSFET… read more here.
Keywords: pdsoi pmosfet; bias temperature; effect;