Residual chlorine in TiO2 films grown at low temperatures by plasma enhanced atomic layer deposition
Sign Up to like & getrecommendations! Published in 2017 at "Thin Solid Films"
DOI: 10.1016/j.tsf.2017.03.025
Abstract: Abstract We have studied the presence of residual chlorine in thin TiO 2 films grown by plasma enhanced atomic layer deposition (PEALD) at temperatures within 40–250 °C range, using x-ray photoemission spectroscopy, secondary ion mass spectrometry,… read more here.
Keywords: residual chlorine; enhanced atomic; films grown; chlorine ... See more keywords
Hydrogen Impacts of PEALD InGaZnO TFTs Using SiOx Gate Insulators Deposited by PECVD and PEALD
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2020.3017145
Abstract: Amorphous indium gallium zinc oxide (IGZO) deposited by plasma-enhanced atomic layer deposition (PEALD) thin-film transistors (TFTs) was fabricated using SiO2 gate insulators synthesized via plasma-enhanced chemical vapor deposition (PECVD, device A) or PEALD (device B).… read more here.
Keywords: sub sub; sub; spectroscopy; sio sub ... See more keywords