High-Performance Atomic-Layer-Deposited Dual-Gate InGaO Thin-Film Transistors.
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DOI: 10.1021/acs.nanolett.5c01059
Abstract: Amorphous oxide semiconductors (AOSs) have attracted considerable attention because of their high carrier density, low thermal budget, and large bandgap. However, the high electron density in AOSs hinders their ability to turn off effectively, resulting… read more here.
Keywords: igo tfts; high performance; performance; performance atomic ... See more keywords