Improving the performance of Ge2Sb2Te5 materials via nickel doping: Towards RF-compatible phase-change devices
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DOI: 10.1063/1.5053713
Abstract: High-speed electrical switching of Ge2Sb2Te5 (GST) remains a challenging task due to the large impedance mismatch between the low-conductivity amorphous state and the high-conductivity crystalline state. In this letter, we demonstrate an effective doping scheme… read more here.
Keywords: change; improving performance; nickel doping; performance ge2sb2te5 ... See more keywords