Enhancing the electrical performance of InAs nanowire field-effect transistors by improving the surface and interface properties by coating with thermally oxidized Y2O3.
Sign Up to like & getrecommendations! Published in 2022 at "Nanoscale"
DOI: 10.1039/d2nr02736d
Abstract: Due to their excellent electrical characteristics, InAs nanowires (NWs) have great potential as conducting channels in integrated circuits. However, the surface effect and loose native oxide coverage can deteriorate the performance of InAs NW transistors.… read more here.
Keywords: field effect; effect; y2o3; surface ... See more keywords
2 MeV proton irradiation effect on the performance of InAs/GaSb type-II superlattice long-wave infrared detectors.
Sign Up to like & getrecommendations! Published in 2023 at "Optics express"
DOI: 10.1364/oe.481794
Abstract: In this work, we investigated the effect of 2 MeV proton irradiation on the performance of InAs/GaSb type-II superlattice long-wave infrared detectors by combining ground-based irradiation experiments with Stopping and Range of Ions in Matter… read more here.
Keywords: inas gasb; performance inas; mev proton; proton irradiation ... See more keywords