Improved Performance of NbOx Resistive Switching Memory by In-Situ N Doping
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DOI: 10.3390/nano12061029
Abstract: Valence change memory (VCM) attracts numerous attention in memory applications, due to its high stability and low energy consumption. However, owing to the low on/off ratio of VCM, increasing the difficulty of information identification hinders… read more here.
Keywords: situ doping; performance nbox; stability; memory ... See more keywords