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Published in 2021 at "Solid-state Electronics"
DOI: 10.1016/j.sse.2021.108173
Abstract: Abstract In this work, the electrical performance and reliability of as-synthesized CVD-grown MoS2 transistors directly grown on SiO2/Si substrate without any transfer process have been evaluated. Transfer and output characteristics, current hysteresis, capacitance-voltage and low-frequency…
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Keywords:
back gated;
grown mos2;
performance reliability;
cvd grown ... See more keywords
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Published in 2020 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.0c08440
Abstract: In this study, various nitrogen-containing functional groups, namely pyridine (N-6), pyrrole (N-5), oxidized N (N-O), and quaternary N (N-Q), are created on activated carbon (AC) surface via melamine, ammonia, and nitric oxide doping methods. N-5…
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Keywords:
nitrogen;
carbon;
carbon electrodes;
charge ... See more keywords
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Published in 2019 at "2D Materials"
DOI: 10.1088/2053-1583/ab28f2
Abstract: Two-dimensional (2D) semiconductors are currently considered a very promising alternative to Si for channel applications in next-generation field-effect transistors of sub-5 nm designs. However, their huge potential cannot be fully exploited owing to a lack…
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Keywords:
performance reliability;
mos fets;
reliability scalable;
caf2 ... See more keywords
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Published in 2023 at "IEEE Access"
DOI: 10.1109/access.2023.3237967
Abstract: A machine learning (ML) method was used to optimize the trap distribution of the charge trap nitride (CTN) to simultaneously improve its performance/reliability (P/R) characteristics, which are tradeoffs in 3-D NAND flash memories. Using an…
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Keywords:
nand flash;
trap;
machine learning;
trap distribution ... See more keywords
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Published in 2017 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2017.2733043
Abstract: Conventionally, integrated drain-extended MOS (DeMOS) like high-voltage devices are designed while keeping only performance targets for a given application in mind. In this paper, for the first time, performance and reliability codesign approach using 3-D…
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Keywords:
reliability codesign;
drain extended;
extended mos;
performance ... See more keywords
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Published in 2019 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2019.2941723
Abstract: As the gate oxide (GOX)-SiC interface of SiC MOSFETs is crucial for device performance, it requires special attention. To improve interface quality, device performance, and reliability, commonly, a postoxidation anneal (POA) is applied. Different gas…
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Keywords:
performance;
device performance;
sic trench;
performance reliability ... See more keywords
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Published in 2020 at "IEEE Transactions on Industrial Electronics"
DOI: 10.1109/tie.2019.2945299
Abstract: The future of power conversion at low-to-medium voltages (around 650 V) poses a very interesting debate. At low voltages (below 100 V), the silicon (Si) MOSFET reigns supreme and at the higher end of the automotive medium-voltage…
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Keywords:
performance reliability;
reliability review;
mosfets cascode;
silicon ... See more keywords
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Published in 2017 at "IEEE Transactions on Services Computing"
DOI: 10.1109/tsc.2015.2475957
Abstract: When combining several services into a composite service, it is non-trivial to determine, prior to service deployment, performance and reliability values of the composite service. Moreover, once the service is deployed, it is often the…
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Keywords:
performance reliability;
service;
performance;
semi markov ... See more keywords
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Published in 2019 at "Sensors and Materials"
DOI: 10.18494/sam.2019.2209
Abstract: 1Department of Electronic Engineering, National Kaohsiung Normal University, No. 62, Shenjhong Rd., Yanchao District, Kaohsiung 824, Taiwan 2Department of Electrical Engineering, National University of Kaohsiung, No. 700, Kaohsiung University Rd., Nanzih District, Kaohsiung 811, Taiwan…
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Keywords:
impact active;
performance reliability;
active surface;
reliability tri ... See more keywords