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Published in 2021 at "AIP Advances"
DOI: 10.1063/5.0056129
Abstract: Graphene p–n junctions hold great potential in the fields of electronic and optoelectronic devices. Here, we develop a scheme of the in situ growth of an epitaxial graphene (EG) lateral p–n junction on a semi-insulating…
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Keywords:
enhanced self;
sic 0001;
graphene;
boron ion ... See more keywords