High-k perovskite gate oxide for modulation beyond 1014 cm−2
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DOI: 10.1126/sciadv.abm3962
Abstract: Scaling down of semiconductor devices requires high-k dielectric materials to continue lowering the operating voltage of field-effect transistors (FETs) and storing sufficient charge on a smaller area. Here, we investigate the dielectric properties of epitaxial… read more here.
Keywords: gate oxide; perovskite gate; oxide modulation; gate ... See more keywords