Intermediate Cu-O-Si Phase in the Cu-SiO2/Si(111) System: Growth, Elemental, and Electrical Studies
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DOI: 10.1021/acsomega.1c02646
Abstract: We investigate here the strain-induced growth of Cu at 600 °C and its interactions with a thermally grown, 270 nm-thick SiO2 layer on the Si(111) substrate. Our results show clear evidence of triangular voids and… read more here.
Keywords: 111 system; sio2 111; system growth; phase sio2 ... See more keywords