Phosphorus implantation into 4H-SiC at room and elevated temperature
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DOI: 10.1088/1361-6641/abf55a
Abstract: Phosphorus implantation is essential to create localized n-type doped regions in 4H-SiC. The realized profiles may, however, deviate from the desired ones, affecting device properties. In order to characterize typical process parameters and to enable… read more here.
Keywords: phosphorus implantation; room elevated; temperature; implantation ... See more keywords