Experimental Detection and Control of Trions and Fermi-Edge Singularity in Single-Barrier GaAs/AlAs/GaAs Heterostructures Using Photocapacitance Spectroscopy
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DOI: 10.1103/physrevapplied.10.044043
Abstract: In this paper, we show how photocapacitance spectra can probe two dimensional excitonic complexes and Fermi edge singularity as a function of applied bias around 100 K. In lower density regimes ( 1x10^11 cm^-2), we… read more here.
Keywords: edge singularity; photocapacitance; spectroscopy; fermi edge ... See more keywords
Influence of Se beam pressure on deep-level defects in Cu(In,Ga)Se 2 thin films studied by photocapacitance and time-resolved photoluminescence measurements
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DOI: 10.1364/ao.56.001291
Abstract: The properties of deep-level defects in Cu(In,Ga)Se2 thin films grown under different Se beam pressure were investigated by photocapacitance (PC) and time-resolved photoluminescence (TRPL) measurements. A generally known deep-level defect located at around 0.8 eV above… read more here.
Keywords: photocapacitance; pressure; beam pressure; deep level ... See more keywords
Effect of Cu/Ga ratio on deep-level defects in CuGaSe2 thin films studied by photocapacitance measurements with two-wavelength excitation.
Sign Up to like & getrecommendations! Published in 2017 at "Applied optics"
DOI: 10.1364/ao.56.004090
Abstract: The effect of the Cu/Ga ratio on properties of deep-level defects in CuGaSe2 thin films were studied, using photocapacitance methods with two-wavelength excitation. The transient photocapacitance method, using a monochromatic probe light, determined two kinds… read more here.
Keywords: photocapacitance; effect ratio; deep level; level ... See more keywords