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Published in 2018 at "IEEE Journal of the Electron Devices Society"
DOI: 10.1109/jeds.2018.2810509
Abstract: We propose a straightforward technique to increase the near-infrared photo-detection efficiency (PDE) in single photon avalanche photodiodes (SPAD) manufactured in CMOS industrial foundries, without any change in the usual semiconductor process flow. The mask used…
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Keywords:
photodetection efficiency;
near infrared;
surface;
enhancing near ... See more keywords