High Performance p-i-n Photodetectors on Ge-on-Insulator Platform
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DOI: 10.3390/nano11051125
Abstract: In this article, we demonstrated novel methods to improve the performance of p-i-n photodetectors (PDs) on a germanium-on-insulator (GOI). For GOI photodetectors with a mesa diameter of 10 μm, the dark current at −1 V… read more here.
Keywords: photodetectors insulator; performance photodetectors; performance; goi ... See more keywords