Low dark current III-V on silicon photodiodes by heteroepitaxy.
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DOI: 10.1364/oe.26.013605
Abstract: Top-illuminated PIN and modified uni-traveling carrier (MUTC) photodiodes based on InGaAs/InAlAs/InP were epitaxially grown on Si templates. Photodiodes with 30-μm diameter have dark currents as low as 10 nA at 3 V corresponding to a… read more here.
Keywords: dark current; photodiodes heteroepitaxy; silicon photodiodes; current iii ... See more keywords