A new guard ring for radiation induced noise reduction in photodiodes implemented in 0.18 μm CMOS technology
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DOI: 10.1007/s11082-017-1125-1
Abstract: A new p-type guard ring by introduction of a thin p-type layer which encloses shallow trench isolation (STI) layer is utilized to reduce radiation induced noise in photodiodes implemented in 0.18 $$\upmu$$μm standard complementary-metal-oxide-semiconductor (CMOS) technology.… read more here.
Keywords: guard ring; radiation induced; photodiodes implemented; technology ... See more keywords