Photoenhanced Electroresistance at Dislocation-Mediated Phase Boundary.
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DOI: 10.1021/acsami.1c25259
Abstract: Ferroelectric tunneling junctions have attracted intensive research interest due to their potential applications in high-density data storage and neural network computing. However, the prerequisite of an ultrathin ferroelectric tunneling barrier makes it a great challenge… read more here.
Keywords: electroresistance; phase boundary; dislocation; ferroelectric tunneling ... See more keywords