Characterization and photoluminescence of Sn-doped β-Ga2O3 nanowires formed by thermal evaporation
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DOI: 10.1016/j.cplett.2020.137624
Abstract: Abstract Sn-doped β-Ga2O3 nanowires were fabricated by V-L-S mechanism using a thermal process at 850 °C. XRD patterns revealed that the Sn4+ ions substituted at Ga3+ lattice sites. HRTEM confirmed that both the Sn-doped and… read more here.
Keywords: ga2o3 nanowires; characterization photoluminescence; photoluminescence doped; doped ga2o3 ... See more keywords