LAUSR

Photoluminescence linewidth narrowing in Yb-doped GaN and InGaN thin films

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1 Published in 2019 at "Journal of Luminescence"

DOI: 10.1016/j.jlumin.2019.01.012

Abstract: Abstract We report on photoluminescence (PL) properties of GaN, GaN:Yb, InGaN, and InGaN:Yb thin films grown on (0001) sapphire substrates by plasma assisted molecular beam epitaxy (MBE). X-ray diffraction pattern of the films confirms c-axis… read more here.

Keywords: thin films; photoluminescence linewidth; linewidth narrowing; gan ingan ... See more keywords