Harvesting strong photoluminescence of physical vapor deposited GeSn with record high deposition temperature
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DOI: 10.1088/1361-6463/acd4cb
Abstract: In this work, strong photoluminescence (PL) from physical vapor deposited GeSn on Ge-buffered Si is harvested by pursuing high deposition temperature. High-quality Ge0.938Sn0.062 films are obtained through sputtering epitaxy at a record high temperature of… read more here.
Keywords: strong photoluminescence; photoluminescence physical; temperature; physical vapor ... See more keywords