Probability Distribution of After Pulsing in Passive-Quenched Single-Photon Avalanche Diodes
Sign Up to like & getrecommendations! Published in 2017 at "IEEE Transactions on Nuclear Science"
DOI: 10.1109/tns.2017.2717463
Abstract: The resolution and accuracy of the number of photons detected by a silicon photomultiplier (SiPM) are limited by the excess noise, which consists mainly of after pulsing and optical crosstalk. Since these excess noises are… read more here.
Keywords: photon avalanche; single photon; probability; avalanche diodes ... See more keywords
Displacement Damage Characterization of CMOS Single-Photon Avalanche Diodes: Alpha-Particle and Fast-Neutron Measurements
Sign Up to like & getrecommendations! Published in 2021 at "IEEE Transactions on Nuclear Science"
DOI: 10.1109/tns.2021.3071171
Abstract: We report on alpha and neutron irradiation of 7.8 $\boldsymbol {\mu }\text{m}$ single-photon avalanche diodes (SPADs) manufactured in 40-nm CMOS. Displacement damage leads to persistent dark count rate hot spots, due to carrier generation centers… read more here.
Keywords: damage; single photon; photon avalanche; displacement damage ... See more keywords
Optical switching a photon-avalanche-like mechanism in NdAl3(BO3)4 particles excited at 1064 nm by an auxiliary beam at 808 nm.
Sign Up to like & getrecommendations! Published in 2022 at "Applied optics"
DOI: 10.1364/ao.477411
Abstract: In recent years, an unconventional excitation of trivalent neodymium ions (N d 3+) at 1064 nm, not resonant with ground-state transitions, has been investigated with the unprecedented demonstration of a photon-avalanche-like (PA-like) mechanism, in which the… read more here.
Keywords: avalanche like; auxiliary beam; like mechanism; photon avalanche ... See more keywords
Noise optimization of single-photon avalanche diodes fabricated in 110 nm CMOS image sensor technology.
Sign Up to like & getrecommendations! Published in 2022 at "Optics express"
DOI: 10.1364/oe.455513
Abstract: This paper presents the effect of shallow trench isolation (STI) on the dark count rate (DCR) and after-pulsing probability (APP) of deep-junction-based single-photon avalanche diodes (SPADs). Two different SPADs were fabricated in 110 nm CMOS… read more here.
Keywords: 110 cmos; avalanche diodes; single photon; photon avalanche ... See more keywords