Flexible In–Ga–Zn–O Thin-Film Transistors With Sub-300-nm Channel Lengths Defined by Two-Photon Direct Laser Writing
Sign Up to like & getrecommendations! Published in 2018 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2018.2851926
Abstract: In this paper, the low-temperature (≤150 °C) fabrication and characterization of flexible indium–gallium–zinc–oxide (IGZO) top-gate thin-film transistors (TFTs) with channel lengths down to 280 nm is presented. Such extremely short channel lengths in flexible IGZO… read more here.
Keywords: channel lengths; photon direct; two photon; thin film ... See more keywords