Sensitive and Ultrabroadband Phototransistor Based on Two‐Dimensional Bi2O2Se Nanosheets
Sign Up to like & getrecommendations! Published in 2019 at "Advanced Functional Materials"
DOI: 10.1002/adfm.201905806
Abstract: Bi2O2Se, a high‐mobility and air‐stable 2D material, has attracted substantial attention for application in integrated logic electronics and optoelectronics. However, achieving an overall high performance over a wide spectral range for Bi2O2Se‐based devices remains a… read more here.
Keywords: bi2o2se nanosheets; bi2o2se; sensitive ultrabroadband; ultrabroadband phototransistor ... See more keywords
High-performance phototransistor based on individual high electron mobility MnWO4 nanoplate
Sign Up to like & getrecommendations! Published in 2018 at "Journal of Alloys and Compounds"
DOI: 10.1016/j.jallcom.2018.05.190
Abstract: Abstract MnWO4 nano-materials have been attracting intensive attention as a potential candidate for modern electronic and optoelectronic nanodevices. However, the availability of highly crystalline MnWO4 nanostructures with controllable geometry shapes still remains a great challenge… read more here.
Keywords: mnwo4 nanoplate; individual high; mnwo4; phototransistor based ... See more keywords
High-performance short-wave infrared phototransistor based on 2D tellurium/MoS2 van der Waals heterojunction
Sign Up to like & getrecommendations! Published in 2021 at "Journal of Materials Chemistry C"
DOI: 10.1039/d1tc02502c
Abstract: Emerging two-dimensional semiconductors, particularly black phosphorus, have attracted great interest for their potential use in room-temperature and low-cost infrared photodetectors. Nevertheless, widespread application with black phosphorus has been substantially delayed... read more here.
Keywords: short wave; phototransistor based; infrared phototransistor; high performance ... See more keywords
Ultrasensitive Phototransistor Based on Laser-Induced P-Type Doped WSe2/MoS2 Van der Waals Heterojunction
Sign Up to like & getrecommendations! Published in 2023 at "Applied Sciences"
DOI: 10.3390/app13106024
Abstract: Out-of-plane p-n heterojunctions based on two-dimensional layered materials (2DLMs) with unusual physical characteristics are attracting extensive research attention for their application as photodetectors. However, the present fabrication method based on 2DLMs produces out-of-plane p-n homojunction… read more here.
Keywords: wse2 mos2; doped wse2; phototransistor based; laser ... See more keywords