Organic Phototransistors Based on Self‐Assembled Microwires of n‐Type Distyrylbenzene Derivative
Sign Up to like & getrecommendations! Published in 2018 at "Asian Journal of Organic Chemistry"
DOI: 10.1002/ajoc.201800399
Abstract: Molecular design and crystallinity control are important issues for the development of high-performance organic optoelectronic devices. Here, a highly photo-responsive n-type organic small molecular semiconductor, (2Z,2’Z)3,3’-(2,5-dimethoxy-1,4-phenylene)bis(2-(3,5-bis(trifluoromethyl)phenyl)acrylonitrile) (DM-R), was synthesized and the photoelectronic properties of self-assembled… read more here.
Keywords: organic phototransistors; thin film; self assembled; film opts ... See more keywords
Highly Sensitive Broadband Phototransistors Based on Gradient Tin/Lead Mixed Perovskites.
Sign Up to like & getrecommendations! Published in 2022 at "Small"
DOI: 10.1002/smll.202205976
Abstract: Highly sensitive broadband photodetectors are critical to numerous cutting-edge technologies such as biomedical imaging, environment monitoring, and night vision. Here, phototransistors based on mixed Sn/Pb perovskites are reported, which demonstrate ultrahigh responsivity, gain and specific… read more here.
Keywords: sensitive broadband; broadband; mixed perovskites; highly sensitive ... See more keywords
Ambipolar organic phototransistors based on 6,6′-dibromoindigo
Sign Up to like & getrecommendations! Published in 2018 at "RSC Advances"
DOI: 10.1039/c8ra02346h
Abstract: Ambipolar organic phototransistors were fabricated using a natural pigment 6,6′-dibromoindigo (6-BrIG) as the active channel. These phototransistors yielded significantly enhanced currents upon light illumination with photoresponsivities and external quantum efficiencies as high as 10.3 A… read more here.
Keywords: based dibromoindigo; organic phototransistors; channel; ambipolar organic ... See more keywords
Ultrasensitive UV-NIR broadband phototransistors based on AgBiS2–organic hybrid films
Sign Up to like & getrecommendations! Published in 2021 at "Journal of Materials Chemistry C"
DOI: 10.1039/d1tc01798e
Abstract: In recent years, AgBiS2 has received great attention in optoelectronics thanks to its fascinating merits, including a suitable bandgap, large absorption coefficient from ultraviolet to near-infrared and remarkable material stability. However, the poor carrier transport… read more here.
Keywords: phototransistors based; ultrasensitive nir; nir broadband; hybrid films ... See more keywords
Improved detectivity and response speed of MoS2 phototransistors based on the negative-capacitance effect and defect engineering.
Sign Up to like & getrecommendations! Published in 2022 at "Optics express"
DOI: 10.1364/oe.475102
Abstract: Due to the unique crystal structure, outstanding optoelectronic properties and a tunable band gap from 1.2-1.8 eV, two-dimensional molybdenum disulfide (MoS2) has attracted extensive attention as a promising candidate for future photodetectors. In this work,… read more here.
Keywords: negative capacitance; effect; defect engineering; mos2 ... See more keywords