Detecting and Preventing Gate Oxide Plasma Damage During PECVD Carbon Deposition Through Surface Photovoltage Measurements
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DOI: 10.1109/asmc.2016.7491161
Abstract: For an advanced NAND flash memory device, there is a failure mechanism known as “blown gate oxide” that is commonly sourced to the plasma-enhanced chemical vapor deposition (PECVD) amorphous carbon deposition step. It has been… read more here.
Keywords: photovoltage measurements; carbon deposition; deposition; surface photovoltage ... See more keywords