Piezoelectric Pressure Sensing Device Using Top-Gate Effect of Dual-Gate a-IGZO TFT
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DOI: 10.1109/jsen.2016.2639525
Abstract: We propose a pressure sensor composed of single-gate and dual-gate amorphous-indium–gallium–zinc–oxide thin-film transistors (TFTs) that are integrated with a P(VDF-TrFE)/PZT composite piezo-capacitor. The TFTs are connected in an inverter configuration, where the piezo-capacitor is connected… read more here.
Keywords: piezoelectric pressure; gate; dual gate; top gate ... See more keywords