Comparison of MEMS switches and PIN diodes for switched dual tuned RF coils
Sign Up to like & getrecommendations! Published in 2018 at "Magnetic Resonance in Medicine"
DOI: 10.1002/mrm.27156
Abstract: To evaluate the performance of micro‐electromechanical systems (MEMS) switches against PIN diodes for switching a dual‐tuned RF coil between 19F and 1H resonant frequencies for multi‐nuclear lung imaging. read more here.
Keywords: comparison mems; switches pin; dual tuned; pin diodes ... See more keywords
Silicon PIN Diodes as Neganov–Trofimov–Luke Cryogenic Light Detectors
Sign Up to like & getrecommendations! Published in 2017 at "Journal of Low Temperature Physics"
DOI: 10.1007/s10909-018-2067-0
Abstract: Cryogenic rare event searches based on heat and light composite calorimeters have a common need for large area photon detectors with high quantum efficiency, good radiopurity and high sensitivity. By employing the Neganov–Trofimov–Luke effect, the… read more here.
Keywords: silicon pin; diodes neganov; pin diodes; light ... See more keywords
Novel phenomenon of negative permittivity in silicon-based PiN diodes induced by electron irradiation
Sign Up to like & getrecommendations! Published in 2021 at "Superlattices and Microstructures"
DOI: 10.1016/j.spmi.2020.106755
Abstract: Abstract The negative permittivity of silicon-based PiN diodes is investigated experimentally in the frequency range from 1 Hz to 10 MHz, where electron irradiations and annealing thermal treatments are carried out. The permittivity is found be greatly… read more here.
Keywords: based pin; permittivity; silicon based; permittivity silicon ... See more keywords
Numerical study on the suppression of 4H-SiC PiN diodes forward bias degradation due to substrate basal plane dislocations
Sign Up to like & getrecommendations! Published in 2020 at "Solid-state Electronics"
DOI: 10.1016/j.sse.2020.107770
Abstract: Abstract We propose a calculation model of current density that causes forward bias degradation from substrate basal plane dislocations (BPDs) in 4H-SiC PiN diodes. The hole concentration above which substrate BPDs expand to single Shockley… read more here.
Keywords: sic pin; forward bias; bias degradation; pin diodes ... See more keywords
A modified finite difference model to the reverse recovery of silicon PIN diodes
Sign Up to like & getrecommendations! Published in 2020 at "Solid-state Electronics"
DOI: 10.1016/j.sse.2020.107839
Abstract: Abstract In this paper, Silvaco Atlas TCAD device-circuit mixed simulation and MATLAB programming are used to compute the reverse recovery processes of silicon PIN diodes. The latter is based on solving the ambipolar diffusion equation… read more here.
Keywords: silicon pin; reverse recovery; simulation; pin diodes ... See more keywords
Direct confirmation of structural differences in single Shockley stacking faults expanding from different origins in 4H-SiC PiN diodes
Sign Up to like & getrecommendations! Published in 2020 at "Journal of Applied Physics"
DOI: 10.1063/5.0021764
Abstract: Structural differences are investigated in partial dislocations that have considerably different threshold current densities for single Shockley-type stacking fault (1SSF) expansions in PiN diodes using transmission electron microscopy and scanning transmission electron microscopy as direct… read more here.
Keywords: microscopy; structural differences; threshold current; pin diodes ... See more keywords
Hard-switching reliability studies of 1200 V vertical GaN PiN diodes
Sign Up to like & getrecommendations! Published in 2018 at "MRS Communications"
DOI: 10.1557/mrc.2018.204
Abstract: We report on reliability testing of vertical GaN (v-GaN) devices under continuous switching conditions of 500, 750, and 1000 V. Using a modified double-pulse test circuit, we evaluate 1200 V-rated v-GaN PiN diodes fabricated by… read more here.
Keywords: gan pin; pin diodes; reliability; vertical gan ... See more keywords