A method for alleviating the effect of pinhole defects from silicon nitride film in n-type rear-junction PERT silicon solar cells
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DOI: 10.1088/2043-6262/acd241
Abstract: We investigated incorporation of a novel approach of phosphorous silicate glass layer thinning (PGT) process in the N-PERT process flow to minimise pinhole defects at the silicon nitride (Si3N4) surface. The thinning (PGT) process for… read more here.
Keywords: silicon nitride; pert; pinhole defects; pgt process ... See more keywords