Strain relaxation in InGaN/GaN epilayers by formation of V-pit defects studied by SEM, XRD and numerical simulations
Sign Up to like & getrecommendations! Published in 2021 at "Journal of Applied Crystallography"
DOI: 10.1107/s1600576720014764
Abstract: V-pit defects in InGaN/GaN were studied by numerical simulations of the strain field and X-ray diffraction (XRD) reciprocal space maps. The results were compared with XRD and scanning electron microscopy (SEM) experimental data collected from… read more here.
Keywords: relaxation; pit defects; ingan gan; numerical simulations ... See more keywords