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Published in 2021 at "Journal of Applied Crystallography"
DOI: 10.1107/s1600576720014764
Abstract: V-pit defects in InGaN/GaN were studied by numerical simulations of the strain field and X-ray diffraction (XRD) reciprocal space maps. The results were compared with XRD and scanning electron microscopy (SEM) experimental data collected from…
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Keywords:
relaxation;
pit defects;
ingan gan;
numerical simulations ... See more keywords