Nanoscopic spectroscopy of potential barriers formed around V-pits in InGaN/GaN multiple quantum wells on moderate temperature GaN pit expansion layers
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DOI: 10.1063/1.5043578
Abstract: We used photoluminescence (PL) spectroscopy combined with scanning near-field optical microscopy to directly observe the potential barriers in InGaN/GaN multiple quantum wells (MQWs) on a GaN layer grown under moderate temperatures (MT-GaN) as the V-pit… read more here.
Keywords: temperature; pit expansion; ingan gan; spectroscopy ... See more keywords